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Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics

dc.contributor.authorBaert, Bruno
dc.contributor.authorGupta, Somya
dc.contributor.authorSchmeits, Marcel
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNguyen, Ngoc Duy
dc.date.accessioned2021-10-21T06:43:52Z
dc.date.available2021-10-21T06:43:52Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22006
dc.sourceIIOimport
dc.titleStudy of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate3/06/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - open access


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