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New-source-side breakdown mechanism in AlGaN/GaN insulated-Gate HEMTs

dc.contributor.authorBahl, Sandeep
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorKang, Xuanwu
dc.contributor.authorMarcon, Denis
dc.contributor.authorZahid, Mohammed
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-21T06:44:14Z
dc.date.available2021-10-21T06:44:14Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22013
dc.sourceIIOimport
dc.titleNew-source-side breakdown mechanism in AlGaN/GaN insulated-Gate HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage12_4
dc.source.conference25th International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate26/05/2013
dc.source.conferencelocationIshikawa Ongakudo Japan
imec.availabilityPublished - imec


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