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Direct tunneling and gate current fluctuations

dc.contributor.authorBaumgartner, O.
dc.contributor.authorBina, M.
dc.contributor.authorGoes, W.
dc.contributor.authorSchanovsky, F.
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorKosina, H.
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-21T06:44:50Z
dc.date.available2021-10-21T06:44:50Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22022
dc.sourceIIOimport
dc.titleDirect tunneling and gate current fluctuations
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage17
dc.source.endpage20
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate3/09/2013
dc.source.conferencelocationGlasgow UK
dc.identifier.urlhttp://dx.doi.org/10.1109/SISPAD.2013.6650563
imec.availabilityPublished - open access


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