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Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale

dc.contributor.authorBayerl, A.
dc.contributor.authorPorti, Marc
dc.contributor.authorMartin-Martinez, Javier
dc.contributor.authorLanza, M.
dc.contributor.authorRodriguez, Rosanna
dc.contributor.authorVelayudhan, V.
dc.contributor.authorAmat, Esteve
dc.contributor.authorNafria, Montse
dc.contributor.authorAymerich, X.
dc.contributor.authorGonzalez, Mireia B
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-21T06:45:02Z
dc.date.available2021-10-21T06:45:02Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22025
dc.sourceIIOimport
dc.titleChannel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage5D4.1
dc.source.endpage5D4.6
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate14/04/2013
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec


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