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Temperature influence on strained nMuGFETs after proton radiation

dc.contributor.authorBordallo, C.
dc.contributor.authorAgopian, Paula
dc.contributor.authorMartino, Joao
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-21T06:48:31Z
dc.date.available2021-10-21T06:48:31Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22065
dc.sourceIIOimport
dc.titleTemperature influence on strained nMuGFETs after proton radiation
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage171
dc.source.endpage176
dc.source.conferenceAdvanced Semiconductor-on-Insulator Technology and Related Physics 16
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 53, Issue 5


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