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Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current

dc.contributor.authorChen, Yangyin
dc.contributor.authorKomura, Masanori
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRaghavan, Naga
dc.contributor.authorClima, Sergiu
dc.contributor.authorZhang, Leqi
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T06:56:35Z
dc.date.available2021-10-21T06:56:35Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22131
dc.sourceIIOimport
dc.titleImprovement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
dc.typeProceedings paper
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.source.peerreviewyes
dc.source.beginpage352
dc.source.endpage355
dc.source.conferenceInternational Electron Deives Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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