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Postcycling LRS retention analysis in HfO2/HF RRAM 1T1R device

dc.contributor.authorChen, Yangyin
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorClima, Sergiu
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorWouters, Dirk
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T06:57:01Z
dc.date.available2021-10-21T06:57:01Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22134
dc.sourceIIOimport
dc.titlePostcycling LRS retention analysis in HfO2/HF RRAM 1T1R device
dc.typeJournal article
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage626
dc.source.endpage628
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume34
dc.identifier.urlhttp://ieeexplore.ieee.org/document/6490333/
imec.availabilityPublished - open access


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