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Channel hot carrier degradation mechanism in long/short channel n-FinFETs

dc.contributor.authorCho, Moon Ju
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFranco, Jacopo
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T06:58:52Z
dc.date.available2021-10-21T06:58:52Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22147
dc.sourceIIOimport
dc.titleChannel hot carrier degradation mechanism in long/short channel n-FinFETs
dc.typeJournal article
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage4002
dc.source.endpage4007
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume60
imec.availabilityPublished - imec


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