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Influence of 45o substrate rotation on the analog performance of biaxially strained-silicon SOI MuGFETs

dc.contributor.authorde Souza, Michelly
dc.contributor.authorDoria, Rodrigo
dc.contributor.authorMartino, Joao
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPavanello, Marcello
dc.date.accessioned2021-10-21T07:11:30Z
dc.date.available2021-10-21T07:11:30Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22223
dc.sourceIIOimport
dc.titleInfluence of 45o substrate rotation on the analog performance of biaxially strained-silicon SOI MuGFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceAdvanced Semiconductor-on-Insulator Technology and Related Physics 16
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 53; Issue 5


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