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Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

dc.contributor.authorDegraeve, Robin
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorArreghini, Antonio
dc.contributor.authorTang, Baojun
dc.contributor.authorCapogreco, Elena
dc.contributor.authorLisoni, Judit
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-21T07:14:30Z
dc.date.available2021-10-21T07:14:30Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22239
dc.sourceIIOimport
dc.titleCharacterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage558
dc.source.endpage561
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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