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dc.contributor.authorEneman, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorRoussel, Philippe
dc.contributor.authorHellings, Geert
dc.contributor.authorKubicek, Stefan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T07:29:18Z
dc.date.available2021-10-21T07:29:18Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22310
dc.sourceIIOimport
dc.titleQuantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpageT92
dc.source.endpageT93
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate11/06/2013
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6576692
imec.availabilityPublished - imec


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