dc.contributor.author | Eneman, Geert | |
dc.contributor.author | Brunco, David | |
dc.contributor.author | Roussel, Philippe | |
dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Kubicek, Stefan | |
dc.contributor.author | Horiguchi, Naoto | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Thean, Aaron | |
dc.date.accessioned | 2021-10-21T07:29:18Z | |
dc.date.available | 2021-10-21T07:29:18Z | |
dc.date.issued | 2013 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/22310 | |
dc.source | IIOimport | |
dc.title | Quantum well band calculations and their impact on device isolation and work function requirements for SiGe and III/V strained heterostructure FinFETs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Eneman, Geert | |
dc.contributor.imecauthor | Roussel, Philippe | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Kubicek, Stefan | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.imecauthor | Thean, Aaron | |
dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
dc.contributor.orcidimec | Roussel, Philippe::0000-0002-0402-8225 | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.source.peerreview | yes | |
dc.source.beginpage | T92 | |
dc.source.endpage | T93 | |
dc.source.conference | Symposium on VLSI Technology | |
dc.source.conferencedate | 11/06/2013 | |
dc.source.conferencelocation | Kyoto Japan | |
dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6576692 | |
imec.availability | Published - imec | |