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Quantum-barriers and ground-plane isolation: a path for scaling bulk-FinFET technologies to the 7 nm-node and beyond

dc.contributor.authorEneman, Geert
dc.contributor.authorHellings, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T07:30:09Z
dc.date.available2021-10-21T07:30:09Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22313
dc.sourceIIOimport
dc.titleQuantum-barriers and ground-plane isolation: a path for scaling bulk-FinFET technologies to the 7 nm-node and beyond
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage320
dc.source.endpage323
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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