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dc.contributor.authorFantini, Andrea
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDegraeve, Robin
dc.contributor.authorWouters, Dirk
dc.contributor.authorRaghavan, Praveen
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorChen, Yangyin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T07:34:29Z
dc.date.available2021-10-21T07:34:29Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22332
dc.sourceIIOimport
dc.titleIntrinsic switching variability in HfO2 RRAM: A theoretical and experimental study
dc.typeProceedings paper
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage30
dc.source.endpage33
dc.source.conference5th IEEE International Memory Workshop - IMW
dc.source.conferencedate26/05/2013
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access


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