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Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorGeypen, Jef
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorGuo, Weiming
dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-21T07:35:11Z
dc.date.available2021-10-21T07:35:11Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22335
dc.sourceIIOimport
dc.titleComposition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si
dc.typeProceedings paper
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage12010
dc.source.conference18th Microscopy of Semiconducting Materials Conference - MSM XVIII
dc.source.conferencedate7/04/2013
dc.source.conferencelocationOxford UK
imec.availabilityPublished - imec
imec.internalnotesJournal of Physics: Conference Series; Vol. 471


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