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SiGe channel technology: superior reliability toward ultra-thin EOT devices – Part II: time-dependent variability in nanoscaled devices and other reliability issues

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T07:42:32Z
dc.date.available2021-10-21T07:42:32Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22365
dc.sourceIIOimport
dc.titleSiGe channel technology: superior reliability toward ultra-thin EOT devices – Part II: time-dependent variability in nanoscaled devices and other reliability issues
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage405
dc.source.endpage412
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume60
imec.availabilityPublished - imec


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