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EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films

dc.contributor.authorGencarelli, Federica
dc.contributor.authorGrandjean, Didier
dc.contributor.authorShimura, Yosuke
dc.contributor.authorVincent, Benjamin
dc.contributor.authorVantomme, Andre
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.contributor.authorTemst, Kristiaan
dc.date.accessioned2021-10-21T07:48:52Z
dc.date.available2021-10-21T07:48:52Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22389
dc.sourceIIOimport
dc.titleEXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage59
dc.source.endpage60
dc.source.conference8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - imec


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