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Switching mechanisms in NiO- and HfO2-based integrated OxRRAM cells

dc.contributor.authorGoux, Ludovic
dc.date.accessioned2021-10-21T07:55:28Z
dc.date.available2021-10-21T07:55:28Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22414
dc.sourceIIOimport
dc.titleSwitching mechanisms in NiO- and HfO2-based integrated OxRRAM cells
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewno
dc.source.conferenceColloque Mémoires Non-Volatile émergentes
dc.source.conferencedate7/06/2013
dc.source.conferencelocationNantes France
imec.availabilityPublished - imec


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