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Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

dc.contributor.authorGoux, Ludovic
dc.contributor.authorKim, Woosik
dc.contributor.authorOpsomer, Karl
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorDe Stefano, Francesca
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorCelano, Umberto
dc.contributor.authorHoussa, Michel
dc.contributor.authorDevulder, Wouter
dc.contributor.authorDetavernier, Christophe
dc.contributor.authorMuller, Robert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T07:56:45Z
dc.date.available2021-10-21T07:56:45Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22418
dc.sourceIIOimport
dc.titleOptimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorDe Stefano, Francesca
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage175
dc.source.endpage180
dc.source.conferenceSemiconductors, Dielectrics, and Metals for Nanoelectronics 11
dc.source.conferencedate27/10/2013
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 58, Issue 7


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