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Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers

dc.contributor.authorGupta, Somya
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAsano, Takanori
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorGencarelli, Federica
dc.contributor.authorShimura, Yosuke
dc.contributor.authorMoussa, Alain
dc.contributor.authorLoo, Roger
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorNguyen, Ngoc Duy
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-21T08:03:58Z
dc.date.available2021-10-21T08:03:58Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22443
dc.sourceIIOimport
dc.titleElectrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage63
dc.source.endpage64
dc.source.conference8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8
dc.source.conferencedate2/06/2013
dc.source.conferencelocationFukuoka Japan
imec.availabilityPublished - open access


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