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Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

dc.contributor.authorHan, Jeong Hwan
dc.contributor.authorUngur, Elisaveta
dc.contributor.authorFranquet, Alexis
dc.contributor.authorOpsomer, Karl
dc.contributor.authorConard, Thierry
dc.contributor.authorMoussa, Alain
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAdelmann, Christoph
dc.date.accessioned2021-10-21T08:08:01Z
dc.date.available2021-10-21T08:08:01Z
dc.date.issued2013-07
dc.identifier.issn2050-7526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22458
dc.sourceIIOimport
dc.titleAtomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics
dc.typeJournal article
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.source.peerreviewyes
dc.source.beginpage5981
dc.source.endpage5989
dc.source.journalJournal of Materials Chemistry C
dc.source.issue37
dc.source.volume1
dc.identifier.urlhttp://pubs.rsc.org/en/content/articlelanding/2013/tc/c3tc31172d#!divAbstractLanding/2013/TC/c3tc31172d#!divAbstract
imec.availabilityPublished - imec


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