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Energy distribution of positive charges in gate dielectric: probing technique and impacts of different defects

dc.contributor.authorHatta, S. W. M.
dc.contributor.authorJi, J.
dc.contributor.authorZhang, J. F.
dc.contributor.authorDuan, M.
dc.contributor.authorZhang, W. D.
dc.contributor.authorSoin, N.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T08:09:41Z
dc.date.available2021-10-21T08:09:41Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22464
dc.sourceIIOimport
dc.titleEnergy distribution of positive charges in gate dielectric: probing technique and impacts of different defects
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage1745
dc.source.endpage1753
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume60
imec.availabilityPublished - imec


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