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Application of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorFavia, Paola
dc.contributor.authorEneman, Geert
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-21T08:16:47Z
dc.date.available2021-10-21T08:16:47Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22489
dc.sourceIIOimport
dc.titleApplication of selective epitaxial growth for merging fins in source/drain areas of sub 20 nm FinFET transistors
dc.typeMeeting abstract
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceE-MRS Fall Meeting Symposium A: Alternative Semiconductor Integration in Si Microelectronics
dc.source.conferencedate16/09/2013
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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