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High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVanherle, Wendy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-21T08:17:24Z
dc.date.available2021-10-21T08:17:24Z
dc.date.issued2013
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22491
dc.sourceIIOimport
dc.titleHigh Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors
dc.typeJournal article
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.identifier.doi10.1149/2.009306jss
dc.source.peerreviewyes
dc.source.beginpageP282
dc.source.endpageP286
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue6
dc.source.volume2
imec.availabilityPublished - imec


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