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Double patterning with dual hard mask for 28nm node devices and below

dc.contributor.authorHody, Hubert
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorVecchio, Emma
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorWinroth, Gustaf
dc.contributor.authorAthimulam, Raja
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-21T08:18:32Z
dc.date.available2021-10-21T08:18:32Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22495
dc.sourceIIOimport
dc.titleDouble patterning with dual hard mask for 28nm node devices and below
dc.typeProceedings paper
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVecchio, Emma
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorAthimulam, Raja
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage86850P
dc.source.conferenceAdvanced Etch Technology for Nanopatterning II
dc.source.conferencedate24/02/2013
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1674540
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 8685


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