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Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe

dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorNoda, Taiji
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorRosseel, Erik
dc.contributor.authorHellings, Geert
dc.contributor.authorVrancken, Christa
dc.contributor.authorEyben, Pierre
dc.contributor.authorBender, Hugo
dc.contributor.authorThean, Aaron
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-21T08:20:01Z
dc.date.available2021-10-21T08:20:01Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22500
dc.sourceIIOimport
dc.titleKinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe
dc.typeProceedings paper
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.source.peerreviewyes
dc.source.conferenceInternational Workshop on Junction Technology - IWJT
dc.source.conferencedate6/06/2013
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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