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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching

dc.contributor.authorVanalme, G. M.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorCardon, F.
dc.contributor.authorVan Daele, Peter
dc.date.accessioned2021-09-30T09:56:04Z
dc.date.available2021-09-30T09:56:04Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2260
dc.sourceIIOimport
dc.titleA ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
dc.typeJournal article
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage907
dc.source.endpage912
dc.source.journalSemiconductor Science and Technology
dc.source.volume12
imec.availabilityPublished - open access


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