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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
Date
1997
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vanalme, G. M.
;
Van Meirhaeghe, R. L.
;
Cardon, F.
;
Van Daele, Peter
Journal
Semiconductor Science and Technology
Abstract
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1977
since deposited on 2021-09-30
Acq. date: 2025-10-23
Citations
Metrics
Views
1977
since deposited on 2021-09-30
Acq. date: 2025-10-23
Citations