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dc.contributor.authorLee, Jae Woo
dc.contributor.authorCho, Moon Ju
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorMitard, Jerome
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChiarella, Thomas
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T09:10:21Z
dc.date.available2021-10-21T09:10:21Z
dc.date.issued2013-03
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22658
dc.sourceIIOimport
dc.title1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage73503
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume102
dc.identifier.urlhttp://apl.aip.org/resource/1/applab/v102/i7/p073503_s1
imec.availabilityPublished - open access


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