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Plasma doping and reduced crystalline damage for conformally doped fin feld effect transistors

dc.contributor.authorLee, Jae Woo
dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorCho, Moon Ju
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorEneman, Geert
dc.contributor.authorChiarella, Thomas
dc.contributor.authorBrus, Stephan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T09:10:45Z
dc.date.available2021-10-21T09:10:45Z
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22659
dc.sourceIIOimport
dc.titlePlasma doping and reduced crystalline damage for conformally doped fin feld effect transistors
dc.typeJournal article
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage223508
dc.source.journalApplied Physics Letters
dc.source.issue22
dc.source.volume102
imec.availabilityPublished - open access


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