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Low frequency noise analysis for post-treatment of replacement metal gate FinFET

dc.contributor.authorLee, Jae Woo
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCho, Moon Ju
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChiarella, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-21T09:11:09Z
dc.date.available2021-10-21T09:11:09Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22660
dc.sourceIIOimport
dc.titleLow frequency noise analysis for post-treatment of replacement metal gate FinFET
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage2960
dc.source.endpage2962
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume60
imec.availabilityPublished - imec


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