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Measurement, modelling and simulation of defects in as-grown Czrochalski silicon

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSenkader, S.
dc.contributor.authorKissinger, G.
dc.contributor.authorHiggs, V.
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorGraef, D.
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, Patrick
dc.date.accessioned2021-09-30T09:58:48Z
dc.date.available2021-09-30T09:58:48Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2272
dc.sourceIIOimport
dc.titleMeasurement, modelling and simulation of defects in as-grown Czrochalski silicon
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage353
dc.source.endpage62
dc.source.journalJournal of Crystal Growth
dc.source.issue3_4
dc.source.volume180
imec.availabilityPublished - open access
imec.internalnotes2nd Int. Workshop on Modelling in Crystal Growth. 13-16 October 1996. Durbuy, Belgium.


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