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Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure

dc.contributor.authorMa, J
dc.contributor.authorZhang, J.F.
dc.contributor.authorJi, Z.
dc.contributor.authorBenbakhti, B.
dc.contributor.authorDuan, M.
dc.contributor.authorZhang, W.
dc.contributor.authorZheng, X.F.
dc.contributor.authorMitard, Jerome
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHall, S.
dc.contributor.authorRobertson, J.
dc.contributor.authorChalker, P.
dc.date.accessioned2021-10-21T09:38:11Z
dc.date.available2021-10-21T09:38:11Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22736
dc.sourceIIOimport
dc.titleTowards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage43
dc.source.endpage45
dc.source.journalMicroelectronic Engineering
dc.source.volume109
imec.availabilityPublished - open access
imec.internalnotesInsulating Films on Semiconductors - INFOS 2013


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