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Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique

dc.contributor.authorMerckling, Clement
dc.contributor.authorWaldron, Niamh
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorRichard, Olivier
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorBender, Hugo
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHeyns, Marc
dc.contributor.authorThean, Aaron
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-21T10:02:53Z
dc.date.available2021-10-21T10:02:53Z
dc.date.issued2013
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22801
dc.sourceIIOimport
dc.titleSelective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage33708
dc.source.journalJournal of Applied Physics
dc.source.issue3
dc.source.volume114
imec.availabilityPublished - imec


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