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Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique

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1882 since deposited on 2021-10-21
2last month
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Acq. date: 2026-02-25

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1882 since deposited on 2021-10-21
2last month
1last week
Acq. date: 2026-02-25

Citations