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Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique
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1878 since deposited on 2021-10-21
1last month
Acq. date: 2025-12-11
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Views
1878 since deposited on 2021-10-21
1last month
Acq. date: 2025-12-11
Citations