Publication:
Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique
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1883 since deposited on 2021-10-21
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Acq. date: 2026-10-10
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Statistics
Views
1883 since deposited on 2021-10-21
1last month
1last week
Acq. date: 2026-10-10
Citations