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Process for making amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) conductive at the source/drain areas of a-IGZO transistors

dc.contributor.authorMuller, Robert
dc.contributor.authorNag, Manoj
dc.contributor.authorUytterhoeven, Griet
dc.contributor.authorVandenplas, Erwin
dc.contributor.authorGenoe, Jan
dc.date.accessioned2021-10-21T10:14:22Z
dc.date.available2021-10-21T10:14:22Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22831
dc.sourceIIOimport
dc.titleProcess for making amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) conductive at the source/drain areas of a-IGZO transistors
dc.typeOral presentation
dc.contributor.imecauthorNag, Manoj
dc.contributor.imecauthorUytterhoeven, Griet
dc.contributor.imecauthorVandenplas, Erwin
dc.contributor.imecauthorGenoe, Jan
dc.contributor.orcidimecUytterhoeven, Griet::0000-0001-7052-2590
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium
dc.source.conferencedate27/05/2013
dc.source.conferencelocationStrasburg France
dc.identifier.urlhttp://www.emrs-strasbourg.com/index.php?option=com_abstract&task=view&id=210&year=2013&Itemid=&id_season=9
imec.availabilityPublished - imec


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