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Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

dc.contributor.authorNichau, Alexander
dc.contributor.authorSchafer, A.
dc.contributor.authorKnoll, L.
dc.contributor.authorWirths, S.
dc.contributor.authorSchram, Tom
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchubert, J.
dc.contributor.authorBernardy, P.
dc.contributor.authorLuysberg, M.
dc.contributor.authorBesmehn, A.
dc.contributor.authorBreuer, U.
dc.contributor.authorBucca, D.
dc.contributor.authorMantl, S
dc.date.accessioned2021-10-21T10:26:19Z
dc.date.available2021-10-21T10:26:19Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22860
dc.sourceIIOimport
dc.titleReduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage103
dc.source.endpage112
dc.source.journalMicroelectronic Engineering
dc.source.volume109
dc.identifier.urlhttp://ac.els-cdn.com/S0167931713002839/1-s2.0-S0167931713002839-main.pdf?_tid=c0a6f756-9304-11e3-9aca-00000aab0f26&acdnat=13921
imec.availabilityPublished - imec


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