Authors

Nichau, Alexander; Schafer, A.; Knoll, L.; Wirths, S.; Schram, Tom; Ragnarsson, Lars-Ake; Schubert, J.; Bernardy, P.; Luysberg, M.; Besmehn, A.; Breuer, U.; Bucca, D.; Mantl, S

ISSN

0167-9317

Journal

Microelectronic Engineering

Volume

109

Title

Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

Publication type

Journal article

Embargo date

9999-12-31