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Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si
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Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si
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Date
2013
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nichau, Alexander
;
Schafer, A.
;
Knoll, L.
;
Wirths, S.
;
Schram, Tom
;
Ragnarsson, Lars-Ake
;
Schubert, J.
;
Bernardy, P.
;
Luysberg, M.
;
Besmehn, A.
;
Breuer, U.
;
Bucca, D.
;
Mantl, S
Journal
Microelectronic Engineering
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1
since deposited on 2021-10-21
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1927
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-09
Citations