Publication:

Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

Date

2013
Journal article
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Author(s)

Nichau, Alexander
;
Schafer, A.
;
Knoll, L.
;
Wirths, S.
;
Schram, Tom  
;
Ragnarsson, Lars-Ake  
;
Schubert, J.
;
Bernardy, P.
;
Luysberg, M.
;
Besmehn, A.
;
Breuer, U.
;
Bucca, D.
;
Mantl, S

Journal

Microelectronic Engineering

Abstract

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