Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

Nichau, Alexander; Schafer, A.; Knoll, L.; Wirths, S.; Schram, Tom; Ragnarsson, Lars-Ake; Schubert, J.; Bernardy, P.; Luysberg, M.; Besmehn, A.; Breuer, U.; Bucca, D.; Mantl, S

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Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

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2013

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Microelectronic Engineering

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Acq. date: 2026-02-26

1927 since deposited on 2021-10-21

Acq. date: 2026-02-26

Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-j/metal gate stacks on Si

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