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Stress induced defect generation implications of doping HfO2 with Al

dc.contributor.authorO'Connor, Robert
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorRagnarsson, Lars-Ake
dc.date.accessioned2021-10-21T10:33:21Z
dc.date.available2021-10-21T10:33:21Z
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22878
dc.sourceIIOimport
dc.titleStress induced defect generation implications of doping HfO2 with Al
dc.typeJournal article
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage54
dc.source.endpage56
dc.source.journalMicroelectronic Engineering
dc.source.volume109
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713003511
imec.availabilityPublished - open access
imec.internalnotesINOS 2013 paper


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