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Fundamental investigation of chemical mechanical polishing of GaAs in ailica dispersions: Material removal and arsenic trihydride formation pathways

dc.contributor.authorOng, Patrick
dc.contributor.authorMatovu, J.B.
dc.contributor.authorLeunissen, Peter
dc.contributor.authorKrishnan, Sitaraman
dc.contributor.authorBabu, S.V.
dc.date.accessioned2021-10-21T10:36:31Z
dc.date.available2021-10-21T10:36:31Z
dc.date.issued2013
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22886
dc.sourceIIOimport
dc.titleFundamental investigation of chemical mechanical polishing of GaAs in ailica dispersions: Material removal and arsenic trihydride formation pathways
dc.typeJournal article
dc.contributor.imecauthorOng, Patrick
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.source.peerreviewyes
dc.source.beginpageP432
dc.source.endpageP439
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue11
dc.source.volume2
dc.identifier.urlhttp://jss.ecsdl.org/content/2/11/P432
imec.availabilityPublished - imec


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