Dry etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack

dc.contributor.author	Paraschiv, Vasile
dc.contributor.author	Boullart, Werner
dc.contributor.author	Altamirano Sanchez, Efrain
dc.date.accessioned	2021-10-21T10:44:57Z
dc.date.available	2021-10-21T10:44:57Z
dc.date.issued	2013
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/22906
dc.source	IIOimport
dc.title	Dry etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack
dc.type	Journal article
dc.contributor.imecauthor	Paraschiv, Vasile
dc.contributor.imecauthor	Boullart, Werner
dc.contributor.imecauthor	Altamirano Sanchez, Efrain
dc.contributor.orcidimec	Boullart, Werner::0000-0001-7614-2097
dc.date.embargo	9999-12-31
dc.source.peerreview	yes
dc.source.beginpage	60
dc.source.endpage	64
dc.source.journal	Microelectronic Engineering
dc.source.volume	105
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0167931712005874
imec.availability	Published - open access