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Quantification of Ge in Si1-xGex by using low energy Cs+ and O2+ ion beams

dc.contributor.authorPureti, Rathaiah
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-21T11:08:23Z
dc.date.available2021-10-21T11:08:23Z
dc.date.issued2013
dc.identifier.issn0142-2421
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22961
dc.sourceIIOimport
dc.titleQuantification of Ge in Si1-xGex by using low energy Cs+ and O2+ ion beams
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.identifier.doi10.1002/sia.5049
dc.source.peerreviewyes
dc.source.beginpage402
dc.source.endpage405
dc.source.journalSurface and Interface Analysis
dc.source.issue1
dc.source.volume45
imec.availabilityPublished - imec


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