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Reliability comparison of ISSG oxide and HTO as tunnel dielectric in 3-D–SONOS applications

dc.contributor.authorQiao, Fengying
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBlomme, Pieter
dc.contributor.authorDate, Lucien
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLiyang, Pan
dc.contributor.authorJun, Xu
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-21T11:09:19Z
dc.date.available2021-10-21T11:09:19Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22963
dc.sourceIIOimport
dc.titleReliability comparison of ISSG oxide and HTO as tunnel dielectric in 3-D–SONOS applications
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage620
dc.source.endpage622
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume34
imec.availabilityPublished - imec


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