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Modification of OSG based low-k films under EUV and VUV exposure

dc.contributor.authorRakhimova, T.
dc.contributor.authorRakhimov, A.
dc.contributor.authorMankelevich, Y.
dc.contributor.authorLopaev, D.
dc.contributor.authorKovalev, A.
dc.contributor.authorVasil'eva, A.
dc.contributor.authorProshina, O.
dc.contributor.authorBraginsky, O.
dc.contributor.authorZyryanov, S.
dc.contributor.authorKurchikov, K.
dc.contributor.authorNovikova, N.
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-21T11:15:16Z
dc.date.available2021-10-21T11:15:16Z
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22976
dc.sourceIIOimport
dc.titleModification of OSG based low-k films under EUV and VUV exposure
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage111902
dc.source.journalApplied Physics Letters
dc.source.volume102
dc.identifier.urlhttp://apl.aip.org/resource/1/applab/v102/i11/p111902_s1
imec.availabilityPublished - open access


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