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Fabrication and characterization of a highly doped poly-SiGe NEMS ohmic switches

dc.contributor.authorRamezani, Maliheh
dc.contributor.authorSeveri, Simone
dc.contributor.authorDu Bois, Bert
dc.contributor.authorAsafa, Tesleem
dc.contributor.authorRottenberg, Xavier
dc.contributor.authorRochus, Veronique
dc.contributor.authorTilmans, Harrie
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-21T11:16:38Z
dc.date.available2021-10-21T11:16:38Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22979
dc.sourceIIOimport
dc.titleFabrication and characterization of a highly doped poly-SiGe NEMS ohmic switches
dc.typeMeeting abstract
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDu Bois, Bert
dc.contributor.imecauthorRottenberg, Xavier
dc.contributor.imecauthorRochus, Veronique
dc.contributor.imecauthorTilmans, Harrie
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDu Bois, Bert::0000-0003-0147-1296
dc.contributor.orcidimecTilmans, Harrie::0000-0003-4240-4962
dc.source.peerreviewyes
dc.source.conferenceNanotechnology Conference and Expo - Nanotech
dc.source.conferencedate12/05/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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