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Highly doped-SiGe as a potential contact material in NEMS ohmic switches: a novel method for contact resistance prediction

dc.contributor.authorRamezani, Maliheh
dc.contributor.authorTamaddon, Amir-Hossein
dc.contributor.authorSeveri, Simone
dc.contributor.authorVanstreels, Kris
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorWitvrouw, Ann
dc.date.accessioned2021-10-21T11:17:30Z
dc.date.available2021-10-21T11:17:30Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22981
dc.sourceIIOimport
dc.titleHighly doped-SiGe as a potential contact material in NEMS ohmic switches: a novel method for contact resistance prediction
dc.typeMeeting abstract
dc.contributor.imecauthorTamaddon, Amir-Hossein
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorVanstreels, Kris
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecTamaddon, Amir-Hossein::0000-0003-4566-0697
dc.contributor.orcidimecVanstreels, Kris::0000-0002-4420-0966
dc.source.peerreviewno
dc.source.conferenceNanotech Conference
dc.source.conferencedate11/05/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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