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Boron doped selective silicon epitaxy: high efficiency and process simplification in IBC cells

dc.contributor.authorRecaman Payo, Maria
dc.contributor.authorPosthuma, Niels
dc.contributor.authorUruena De Castro, Angel
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-21T11:20:33Z
dc.date.available2021-10-21T11:20:33Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22988
dc.sourceIIOimport
dc.titleBoron doped selective silicon epitaxy: high efficiency and process simplification in IBC cells
dc.typeProceedings paper
dc.contributor.imecauthorRecaman Payo, Maria
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage941
dc.source.endpage946
dc.source.conference28th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC
dc.source.conferencedate30/09/2013
dc.source.conferencelocationParis France
imec.availabilityPublished - imec


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