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SiGe epitaxially grown in nano-trenches on Si substrate

dc.contributor.authorRichard, Olivier
dc.contributor.authorVincent, Benjamin
dc.contributor.authorFavia, Paola
dc.contributor.authorLagrain, Pieter
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-21T11:23:11Z
dc.date.available2021-10-21T11:23:11Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22994
dc.sourceIIOimport
dc.titleSiGe epitaxially grown in nano-trenches on Si substrate
dc.typeProceedings paper
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorLagrain, Pieter
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLagrain, Pieter::0000-0003-3734-7203
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage12028
dc.source.conference18th Microscopy of Semiconducting Materials Conference - MSM XVIII
dc.source.conferencedate7/04/2013
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesJournal of Physics: Conference Series; Vol. 471


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