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GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS

dc.contributor.authorSilvestri, Marco
dc.contributor.authorMichael, Uren
dc.contributor.authorMarcon, Denis
dc.contributor.authorKuball, Martin
dc.date.accessioned2021-10-21T12:03:25Z
dc.date.available2021-10-21T12:03:25Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23082
dc.sourceIIOimport
dc.titleGaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.source.peerreviewyes
dc.source.beginpage195
dc.source.endpage197
dc.source.conferenceCS Mantech Conference
dc.source.conferencedate13/05/2013
dc.source.conferencelocationNew Orleans, LA USA
imec.availabilityPublished - imec


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